Fairchild Semiconductor FDG314P overview
Fairchild Semiconductor Corporation FDG314P Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH ...
Product details
Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDG314P Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):650 mA, Drain Current-Max (ID):650 mA, Drain -source On Resistance-Max:1.1 Ω
DescriptionFAIRCHILD SEMICONDUCTOR FDG314P. MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:0.65A Package/Case:6-SC-70 Drain-Source Breakdown Voltage:-25V Gate-Source Voltage:-25V Leaded Process Compatible:No Peak Reflow Compatible (260 C):No RoHS Compliant: No
DescriptionFairchild Semiconductor FDG314P Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Fairchild Semiconductor
View Fairchild Semiconductor profile
Available from
Sourcing support available
Start a sourcing request
| # | Name |
|---|---|
| 1 | FDG314P. |