Fairchild Semiconductor FDG313N overview
Fairchild Semiconductor Corporation FDG313N Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FDG313N Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):650 mA, Drain Current-Max (ID):950 mA, Drain-source On Resistance-Max:450 mΩ
DescriptionFAIRCHILD SEMICONDUCTOR FDG313N. MOSFET Transistor Polarity:N Channel Continuous Drain Current, Id:0.95A Package/Case:6-SC-70 Drain-Source Breakdown Voltage:25V Gate-Source Voltage:25V Leaded Process Compatible:No Peak Reflow Compatible (260 C):No RoHS Compliant: No
DescriptionFairchild Semiconductor FDG313N Discrete Semiconductor Products
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| # | Name |
|---|---|
| 1 | FDG313N. |