Fairchild Semiconductor FDD3570 overview
Fairchild Semiconductor Corporation FDD3570 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FDD3570 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (Abs) (ID):43 A,Drain Current-Max (ID):43 A,Drain-source On Resistance-Max:20 m?
DescriptionFAIRCHILD SEMICONDUCTOR FDD3570. MOSFET Transistor Polarity:N Channel Continuous Drain Current, Id:43A On-Resistance, Rds(on):0.019ohm Package/Case:TO-252 Drain-Source Breakdown Voltage:-55V Gate-Source Voltage:4V Leaded Process Compatible:No RoHS Compliant: No
DescriptionFairchild Semiconductor FDD3570 Discrete Semiconductor Products
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| # | Name |
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| 1 | FDD3570. |