Fairchild Semiconductor FCB11N60FTM overview
Fairchild Semiconductor Corporation FCB11N60FTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FCB11N60FTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:380 m?
DescriptionFairchild Semiconductor FCB11N60FTM Discrete Semiconductor Products
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