Fairchild Semiconductor FGL60N100BNTD overview
FGL60N100BNTD Fairchild Semiconductor Corporation FGL60N100BNTD IGBT, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Ma...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFGL60N100BNTD
DescriptionFairchild Semiconductor Corporation FGL60N100BNTD IGBT, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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