Excelliance MOS EMFA0P02J overview
Excelliance MOS Corporation EMFA0P02J Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,...
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Product groupModules
DescriptionExcelliance MOS Corporation EMFA0P02J Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (ID):3.4 A,Drain-source On Resistance-Max:100 m?
DescriptionExcelliance MOS EMFA0P02J P-Channel Enhancement Mode FET -3A -20V 100mΩ SOT-23
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