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EM636165BE-10G

Etron Technology Inc ยท DRAM's

Etron Technology Inc EM636165BE-10G

Etron Technology Inc EM636165BE-10G overview

Etron Technology Inc EM636165BE-10G Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 ...

Manufactured byEtron Technology Inc
Part number or familyEM636165BE-10G
Product groupDRAM's

Product details

Manufactured byEtron Technology Inc
Product groupDRAM's
DescriptionEtron Technology Inc EM636165BE-10G Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096

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Manufactured by Etron Technology Inc View Etron Technology Inc profile
Product group DRAM's Explore DRAM's Explore Memory
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