Samsung K4W2G1646C-HC12 overview
K4W2G1646C-HC12 is an integrated circuit made by Samsung. Samsung Semiconductor K4W2G1646C-HC12 Dram, Memory Density:2.1475 Gbit, Memory Width:16, Organization:128MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192 SAMSUNG…
Product details
Manufactured bySamsung
Product typeIntegrated Circuit (ICs)
DescriptionSamsung Semiconductor K4W2G1646C-HC12 Dram, Memory Density:2.1475 Gbit, Memory Width:16, Organization:128MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4W2G1646C-HC12 Specialized Hot IC, SAMSUNG BGA
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Integrated Circuit (ICs)
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