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K4B2G0846D-HCK0

Samsung ยท DRAM's

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Samsung K4B2G0846D-HCK0

Samsung K4B2G0846D-HCK0 overview

Samsung Semiconductor K4B2G0846D-HCK0 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5...

Manufactured bySamsung
Part number or familyK4B2G0846D-HCK0
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor K4B2G0846D-HCK0 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
DescriptionSAMSUNG K4B2G0846D-HCK0 Specialized Hot IC, K4B2G0846D-HCK0 SAMSUNG

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Manufactured by Samsung View Samsung profile
Product group DRAM's Explore DRAM's Explore Integrated Circuits (ICs) Explore Memory
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