Product details
Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor K4B2G0846D-HCF8 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:300 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4B2G0846D-HCF8 Specialized Hot IC, SAMSUNG FBGA
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