Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B1G0446E-HCH9 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:125 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4B1G0446E-HCH9 Specialized Hot IC, K4B1G0446E-HCH9 SAMSUNG
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