M14D1G1664A-2.5BVAG2S by Elite Semiconductor Memory Technology Inc

Elite Semiconductor Memory Technology Inc M14D1G1664A-2.5BVAG2S overview

Elite Semiconductor Memory Technology Inc M14D1G1664A-2.5BVAG2S Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup...

Manufactured byElite Semiconductor Memory Technology Inc

Part number or familyM14D1G1664A-2.5BVAG2S

Product groupDRAM's

Product details

Manufactured byElite Semiconductor Memory Technology Inc

Product groupDRAM's

DescriptionElite Semiconductor Memory Technology Inc M14D1G1664A-2.5BVAG2S Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST

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Manufactured by Elite Semiconductor Memory Technology Inc View Elite Semiconductor Memory Technology Inc profile

Product group DRAM's Explore DRAM's Explore Memory

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