M13S2561616A-4BG by Elite Semiconductor Memory Technology Inc

Elite Semiconductor Memory Technology Inc M13S2561616A-4BG overview

Elite Semiconductor Memory Technology Inc M13S2561616A-4BG Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2...

Manufactured byElite Semiconductor Memory Technology Inc

Part number or familyM13S2561616A-4BG

Product groupDRAM's

Product details

Manufactured byElite Semiconductor Memory Technology Inc

Product groupDRAM's

DescriptionElite Semiconductor Memory Technology Inc M13S2561616A-4BG Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2.6 V, Access Time-Max:750 ps, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Elite Semiconductor Memory Technology Inc View Elite Semiconductor Memory Technology Inc profile

Product group DRAM's Explore DRAM's Explore Memory

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