M13S128168A-4BVG2N by Elite Semiconductor Memory Technology Inc

Elite Semiconductor Memory Technology Inc M13S128168A-4BVG2N overview

Elite Semiconductor Memory Technology Inc M13S128168A-4BVG2N Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):...

Manufactured byElite Semiconductor Memory Technology Inc

Part number or familyM13S128168A-4BVG2N

Product groupDRAM's

Product details

Manufactured byElite Semiconductor Memory Technology Inc

Product groupDRAM's

DescriptionElite Semiconductor Memory Technology Inc M13S128168A-4BVG2N Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Access Time-Max:600 ps, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Elite Semiconductor Memory Technology Inc View Elite Semiconductor Memory Technology Inc profile

Product group DRAM's Explore DRAM's Explore Memory

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