M12S16161A-10TG by Elite Semiconductor Memory Technology Inc

Elite Semiconductor Memory Technology Inc M12S16161A-10TG overview

Elite Semiconductor Memory Technology Inc M12S16161A-10TG Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):2.5 ...

Manufactured byElite Semiconductor Memory Technology Inc

Part number or familyM12S16161A-10TG

Product groupDRAM's

Product details

Manufactured byElite Semiconductor Memory Technology Inc

Product groupDRAM's

DescriptionElite Semiconductor Memory Technology Inc M12S16161A-10TG Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048

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Manufactured by Elite Semiconductor Memory Technology Inc View Elite Semiconductor Memory Technology Inc profile

Product group DRAM's Explore DRAM's Explore Memory

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