Elantec Semiconductor EN2016L overview
EN2016L is a transistor made by Elantec Semiconductor. Elantec EN2016L Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):50 mΩ, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SEPARATE, 4 ELEMENTS, Number of Terminals:20, Number of Elements:4, DC Current Gain-Min…
Manufactured byElantec Semiconductor
Part number or familyEN2016L
Product typeTransistor
Product details
Manufactured byElantec Semiconductor
Product typeTransistor
DescriptionElantec EN2016L Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):50 mΩ, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SEPARATE, 4 ELEMENTS, Number of Terminals:20, Number of Elements:4, DC Current Gain-Min (hFE):75, Transition Frequency-Nom (fT):350 mΩz
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Elantec Semiconductor
Available from
Sourcing support available
Start a sourcing request