Elantec Semiconductor EN2016J overview
EN2016J is an IC device made by Elantec Semiconductor. Elantec EN2016J Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):50 mΩ, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SEPARATE, 4 ELEMENTS, Number of Terminals:14, Number of Elements:4, DC Current Gain-Min…
Manufactured byElantec Semiconductor
Part number or familyEN2016J
Product typeIC Device
Product details
Manufactured byElantec Semiconductor
Product typeIC Device
DescriptionElantec EN2016J Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):50 mΩ, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SEPARATE, 4 ELEMENTS, Number of Terminals:14, Number of Elements:4, DC Current Gain-Min (hFE):75, Transition Frequency-Nom (fT):350 mΩz
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Elantec Semiconductor
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