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EPC2012C

Efficient Power Conversion · Modules

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Efficient Power Conversion EPC2012C

Efficient Power Conversion EPC2012C overview

Efficient Power Conversion EPC2012C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminal...

Manufactured byEfficient Power Conversion
Part number or familyEPC2012C
Product groupModules

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Manufactured byEfficient Power Conversion
Product groupModules
DescriptionEfficient Power Conversion EPC2012C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:100 mΩ
DescriptionEfficient Power Conversion EPC2012C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):5 A,Drain-source On Resistance-Max:100 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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