Efficient Power Conversion EPC2012 overview
Efficient Power Conversion EPC2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals...
Product details
Manufactured byEfficient Power Conversion
Product groupModules
DescriptionEfficient Power Conversion EPC2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:100 mΩ
DescriptionEfficient Power Conversion EPC2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:100 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Efficient Power Conversion
View Efficient Power Conversion profile
Available from
Sourcing support available
Start a sourcing request
