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DescriptionDiodes Incorporated DMN3052L-7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.4 A, Drain Current-Max (ID):5.4 A, Drain-source On Resistance-Max:32 mΩ
DescriptionDiodes Incorporated DMN3052L-7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.4 A,Drain Current-Max (ID):5.4 A,Drain-source On Resistance-Max:32 m?
DescriptionDIODES DMN3052L-7 MOSFET N-CH 30V 5.4A 32 mOhm 250μA 555pF 1.4W SOT23-3
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