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DescriptionDiodes Incorporated DMN1019UVT-7 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (ID):10.7 A, Drain-source On Resistance-Max:10 mΩ
DescriptionDIODES DMN1019UVT-7 Discrete Semiconductor, Trans MOSFET N-CH 12V 10.7A Automotive 6-Pin TSOT-26 T/R
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