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CY7C106A

Cypress Semiconductor · Static RAs

Cypress Semiconductor CY7C106A

Cypress Semiconductor CY7C106A overview

Cypress CY7C106A Series 256K x 4 Static RAMs The CY7C106A is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is p...

Manufactured byCypress Semiconductor
Part number or familyCY7C106A
Product typeStatic RA

Product details

Manufactured byCypress Semiconductor
Product typeStatic RA
DescriptionCypress CY7C106A Series 256K x 4 Static RAMs
OverviewThe CY7C106A is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected.Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A17).Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the four I/O pins.The four input/output pins (I/O0 through I/O3) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE and WE LOW).The CY7C106A is available in standard 400-mil-wide DIPs and SOJs.
Key FeaturesHigh speed— tAA = 12 ns CMOS for optimum speed/power Low active power— 910 mW Low standby power— 275 mW 2.0V data retention (optional)— 100 µW Automatic power-down when deselected TTL-compatible inputs and outputs

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