Cypress Semiconductor CY14E102N-BA20XI overview
Cypress Semiconductor CY14E102N-BA20XI Sram, Memory Density:2.0972 Mbit, Memory Width:16, Organization:128KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 ...
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Manufactured byCypress Semiconductor
Product groupModules
DescriptionCypress Semiconductor CY14E102N-BA20XI Sram, Memory Density:2.0972 Mbit, Memory Width:16, Organization:128KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:20 ns
DescriptionCypress Semiconductor CY14E102N-BA20XI Sram, Memory Density:2.0972 Mbit, Memory Width:16, Organization:128KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:20 ns
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