Cobham Semiconductor Solutions 1N950B overview
Cobham Semiconductor Solutions 1N950B Varactor, Diode Capacitance-Nom:35 pF, Power Dissipation-Max:400 mW, Diode Element Material:SILICON, Breakdown Voltage-Min...
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Manufactured byCobham Semiconductor Solutions
Product groupModules
DescriptionCobham Semiconductor Solutions 1N950B Varactor, Diode Capacitance-Nom:35 pF, Power Dissipation-Max:400 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:150 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:NO, Number of Elements:1
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