CXDM6053N by CENTRAL SEMICONDUCTOR | StockCheck

CENTRAL SEMICONDUCTOR CXDM6053N overview

Central Semiconductor Corp CXDM6053N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byCENTRAL SEMICONDUCTOR

Part number or familyCXDM6053N

Product typeTransistor

Product details

Manufactured byCENTRAL SEMICONDUCTOR

Product typeTransistor

DescriptionCentral Semiconductor Corp CXDM6053N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):5.3 A, Drain-source On Resistance-Max:41 mΩ

DescriptionCentral Semiconductor Corp CXDM6053N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):5.3 A,Drain-source On Resistance-Max:41 m?

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Manufactured by CENTRAL SEMICONDUCTOR View CENTRAL SEMICONDUCTOR profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

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