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✓Product overview CENTRAL SEMICONDUCTOR

CXDM3069N

CENTRAL SEMICONDUCTOR · Modules

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CENTRAL SEMICONDUCTOR CXDM3069N

CENTRAL SEMICONDUCTOR CXDM3069N overview

Central Semiconductor Corp CXDM3069N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCXDM3069N
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CXDM3069N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):6.9 A, Drain-source On Resistance-Max:30 mΩ
DescriptionCentral Semiconductor Corp CXDM3069N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):6.9 A,Drain-source On Resistance-Max:30 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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