CENTRAL SEMICONDUCTOR CXDM1002N overview
Central Semiconductor Corp CXDM1002N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...
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DescriptionCentral Semiconductor Corp CXDM1002N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:300 mΩ
DescriptionCentral Semiconductor Corp CXDM1002N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:300 m?
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