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CWDM305ND

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CWDM305ND

CENTRAL SEMICONDUCTOR CWDM305ND overview

Central Semiconductor Corp CWDM305ND Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH ...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCWDM305ND
Product groupModules

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Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CWDM305ND Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (ID):5.8 A, Drain-source On Resistance-Max:34 mΩ
DescriptionCentral Semiconductor Corp CWDM305ND Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (ID):5.8 A,Drain-source On Resistance-Max:34 m?

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