CENTRAL SEMICONDUCTOR CTLM8110-M832D overview
Central Semiconductor Corp CTLM8110-M832D Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN ...
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DescriptionCentral Semiconductor Corp CTLM8110-M832D Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):860 mA, Drain-source On Resistance-Max:150 mΩ
DescriptionCentral Semiconductor Corp CTLM8110-M832D Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (ID):860 mA,Drain-source On Resistance-Max:150 m?
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