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CDM7-650

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CDM7-650

CENTRAL SEMICONDUCTOR CDM7-650 overview

Central Semiconductor Corp CDM7-650 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE,...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCDM7-650
Product groupModules

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Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CDM7-650 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:1.5 Ω
DescriptionCentral Semiconductor Corp CDM7-650 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:650 V,Number of Elements:1,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:1.5 ?

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