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CDM4-600LR

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CDM4-600LR

CENTRAL SEMICONDUCTOR CDM4-600LR overview

Central Semiconductor Corp CDM4-600LR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIOD...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCDM4-600LR
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CDM4-600LR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:950 mΩ
DescriptionCentral Semiconductor Corp CDM4-600LR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:950 m?

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