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✓Product overview CENTRAL SEMICONDUCTOR

CDM22012-800LRFP

CENTRAL SEMICONDUCTOR · Modules

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CENTRAL SEMICONDUCTOR CDM22012-800LRFP

CENTRAL SEMICONDUCTOR CDM22012-800LRFP overview

Central Semiconductor Corp CDM22012-800LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCDM22012-800LRFP
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CDM22012-800LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:450 mΩ
DescriptionCentral Semiconductor Corp CDM22012-800LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:450 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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