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✓Product overview CENTRAL SEMICONDUCTOR

CDM22011-600LRFP

CENTRAL SEMICONDUCTOR · Modules

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CENTRAL SEMICONDUCTOR CDM22011-600LRFP

CENTRAL SEMICONDUCTOR CDM22011-600LRFP overview

Central Semiconductor Corp CDM22011-600LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCDM22011-600LRFP
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CDM22011-600LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):11 A, Drain-source On Resistance-Max:360 mΩ
DescriptionCentral Semiconductor Corp CDM22011-600LRFP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:360 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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