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CXT5551HCTR

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CXT5551HCTR

CENTRAL SEMICONDUCTOR CXT5551HCTR overview

Central Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN,...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCXT5551HCTR
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):100 MHz
DescriptionCentral Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):100 mΩz

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