CENTRAL SEMICONDUCTOR CXT5551HCTR overview
Central Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN,...
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DescriptionCentral Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):100 MHz
DescriptionCentral Semiconductor Corp CXT5551HCTR Power Bipolar Transistor, Collector-Emitter Voltage-Max:160 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30, Transition Frequency-Nom (fT):100 mΩz
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