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CJD41CBK

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CJD41CBK

CENTRAL SEMICONDUCTOR CJD41CBK overview

Central Semiconductor Corp CJD41CBK Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Su...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCJD41CBK
Product groupModules

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Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CJD41CBK Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):15, Transition Frequency-Nom (fT):3 MHz
DescriptionCentral Semiconductor Corp CJD41CBK Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):15, Transition Frequency-Nom (fT):3 mΩz

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