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CJD350

CENTRAL SEMICONDUCTOR · Modules

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CENTRAL SEMICONDUCTOR CJD350

CENTRAL SEMICONDUCTOR CJD350 overview

Central Semiconductor Corp CJD350 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:PNP, S...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCJD350
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CJD350 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):30
DescriptionCentral Semiconductor Corp CJD350 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):30

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Product group Modules Explore Modules Explore Transistor Explore Power Bipolar Transistors
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