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CJD32C

CENTRAL SEMICONDUCTOR · Modules

CENTRAL SEMICONDUCTOR CJD32C

CENTRAL SEMICONDUCTOR CJD32C overview

Central Semiconductor Corp CJD32C Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surf...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCJD32C
Product groupModules

Product details

Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CJD32C Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):3 MHz
DescriptionCentral Semiconductor Corp CJD32C Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:PNP, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):3 mΩz

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