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CMKBR-6F

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CENTRAL SEMICONDUCTOR CMKBR-6F

CENTRAL SEMICONDUCTOR CMKBR-6F overview

Central Semiconductor Corp CMKBR-6F Bridge Rectifier Diode, Output Current-Max:140 mA, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Breakdown V...

Manufactured byCENTRAL SEMICONDUCTOR
Part number or familyCMKBR-6F
Product groupModules

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Manufactured byCENTRAL SEMICONDUCTOR
Product groupModules
DescriptionCentral Semiconductor Corp CMKBR-6F Bridge Rectifier Diode, Output Current-Max:140 mA, Power Dissipation-Max:350 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:BRIDGE RECTIFIER DIODE, Configuration:BRIDGE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:4, Technology:SCHOTTKY
DescriptionCentral Semiconductor Corp CMKBR-6F Bridge Rectifier Diode, Output Current-Max:140 mA,Power Dissipation-Max:350 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:60 V,Diode Type:BRIDGE RECTIFIER DIODE,Configuration:BRIDGE, 4 ELEMENTS,Surface Mount:YES,Rep Pk Reverse Voltage-Max:60 V,Number of Elements:4,Technology:SCHOTTKY

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