BRILLIANCE SEMICONDUCTOR BS62UV1027SIG10 overview
BS62UV1027SIG10 is made by BRILLIANCE SEMICONDUCTOR. Brilliance Semiconductor Inc BS62UV1027SIG10 Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2/3 V, Access Time-Max:100 ns
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Part number or familyBS62UV1027SIG10
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Manufactured byBRILLIANCE SEMICONDUCTOR
DescriptionBrilliance Semiconductor Inc BS62UV1027SIG10 Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2/3 V, Access Time-Max:100 ns
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