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BS62LV4001SI-10

BRILLIANCE SEMICONDUCTOR

BRILLIANCE SEMICONDUCTOR BS62LV4001SI-10

BRILLIANCE SEMICONDUCTOR BS62LV4001SI-10 overview

BS62LV4001SI-10 is made by BRILLIANCE SEMICONDUCTOR. Brilliance Semiconductor Inc BS62LV4001SI-10 Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):3 V, Access Time-Max:100 ns

Part number or familyBS62LV4001SI-10
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Manufactured byBRILLIANCE SEMICONDUCTOR
DescriptionBrilliance Semiconductor Inc BS62LV4001SI-10 Sram, Memory Density:4.1943 Mbit, Memory Width:8, Organization:512KX8, Supply Voltage-Nom (Vsup):3 V, Access Time-Max:100 ns

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