BRILLIANCE SEMICONDUCTOR BS616UV2019TCG10 overview
BS616UV2019TCG10 is made by BRILLIANCE SEMICONDUCTOR. Brilliance Semiconductor Inc BS616UV2019TCG10 Sram, Memory Density:2.0972 Mbit, Memory Width:16, Organization:128KX16, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2/3.3 V, Access Time-Max:100 ns
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Part number or familyBS616UV2019TCG10
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Manufactured byBRILLIANCE SEMICONDUCTOR
DescriptionBrilliance Semiconductor Inc BS616UV2019TCG10 Sram, Memory Density:2.0972 Mbit, Memory Width:16, Organization:128KX16, Supply Voltage-Nom (Vsup):2 V, Power Supplies:2/3.3 V, Access Time-Max:100 ns
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