Avago Technologies AGRB10E overview
AGRB10E is made by Avago Technologies. Avago Technologies AGRB10E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1
Manufactured byAvago Technologies
Part number or familyAGRB10E
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Manufactured byAvago Technologies
DescriptionAvago Technologies AGRB10E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1
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