Product details
Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF888ES Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:104 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):15.3 dB
DescriptionAmpleon BLF888ES Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:104 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):15.3 dB
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Ampleon
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Product group
Modules
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