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BLF8G19LS-170BVX

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Ampleon BLF8G19LS-170BVX

Ampleon BLF8G19LS-170BVX overview

Ampleon BLF8G19LS-170BVX Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number o...

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Part number or familyBLF8G19LS-170BVX
Product groupModules

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Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF8G19LS-170BVX Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:6, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:2
DescriptionAmpleon BLF8G19LS-170BVX Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:6, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:2

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Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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