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BLF8G10LS-300P

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Ampleon BLF8G10LS-300P

Ampleon BLF8G10LS-300P overview

Ampleon BLF8G10LS-300P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of ...

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Part number or familyBLF8G10LS-300P
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Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF8G10LS-300P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2
DescriptionAmpleon BLF8G10LS-300P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2

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