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BLF888AS

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Ampleon BLF888AS

Ampleon BLF888AS overview

Ampleon BLF888AS Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Termin...

Manufactured byAmpleon
Part number or familyBLF888AS
Product groupModules

Product details

Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF888AS Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:110 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2
DescriptionAmpleon BLF888AS Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:110 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2

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Manufactured by Ampleon View Ampleon profile
Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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