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BLF884P

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Ampleon BLF884P

Ampleon BLF884P overview

Ampleon BLF884P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Termina...

Manufactured byAmpleon
Part number or familyBLF884P
Product groupModules

Product details

Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF884P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:104 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2
DescriptionAmpleon BLF884P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:104 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2

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Manufactured by Ampleon View Ampleon profile
Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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