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BLF7G22LS-200

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Ampleon BLF7G22LS-200

Ampleon BLF7G22LS-200 overview

Ampleon BLF7G22LS-200 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Brea...

Manufactured byAmpleon
Part number or familyBLF7G22LS-200
Product groupModules

Product details

Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF7G22LS-200 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1
DescriptionAmpleon BLF7G22LS-200 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1

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Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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