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BLF6G22LS-100

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Ampleon BLF6G22LS-100

Ampleon BLF6G22LS-100 overview

Ampleon BLF6G22LS-100 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Brea...

Manufactured byAmpleon
Part number or familyBLF6G22LS-100
Product groupModules

Product details

Manufactured byAmpleon
Product groupModules
DescriptionAmpleon BLF6G22LS-100 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (ID):29 A
DescriptionAmpleon BLF6G22LS-100 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (ID):29 A

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Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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