Freescale Semiconductor BLF6G10LS-260PRN overview
Ampleon BLF6G10LS-260PRN Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number o...
Manufactured byFreescale Semiconductor
Part number or familyBLF6G10LS-260PRN
Product groupPower LDMOS Transistor
Product details
Manufactured byFreescale Semiconductor
Product groupPower LDMOS Transistor
DescriptionAmpleon BLF6G10LS-260PRN Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (ID):64 A
DescriptionAmpleon BLF6G10LS-260PRN Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (ID):64 A
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Freescale Semiconductor
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Power LDMOS Transistor
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